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STP200NF03 STB200NF03 - STB200NF03-1
N-channel 30V - 0.0032 - 120A - D2PAK/I2PAK/TO-220 STripFETTM III Power MOSFET
General features
Type STP200NF03 STB200NF03 STB200NF03-1 VDSS 30V 30V 30V RDS(on) <0.0037 <0.0037 <0.0037 ID 120A(1) 120A(1) 120A(1) TO-220
1 2 3
3 1
D2PAK
1. Current Limited by Package
Standard threshold drive 100% avalanche tested
I2PAK
3 12
Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STB200NF03T4 STB200NF03-1 STP200NF03 Marking B200NF03 B200NF03 P200NF03 Package D I
2PAK 2PAK
Packaging Tape & reel Tube Tube
TO-220
February 2007
Rev 4
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www.st.com 18
Contents
STP200NF03 - STB200NF03 - STB200NF03-1
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6 7
Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STP200NF03 - STB200NF03 - STB200NF03-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID(1) ID(1) IDM(2) Ptot dv/dt(3) EAS (4) Tstg Tj
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Max. operating junction temperature -55 to 175 C Value 30 30 20 120 120 480 300 2.0 1.5 1.45 Unit V V V A A A W W/C V/ns J
1. Value limited by package 2. Pulse width limited by safe operating area. 3. ISD 120A, di/dt 400A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj = 25 C, ID = 60A, VDD = 25V
Table 2.
Rthj-case Rthj-amb Rthj-pcb TJ
Thermal data
Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-pcb Maximum lead temperature for soldering purpose(1) 0.5 62.5 see curve 13 and 14 300 C C/W C/W
1. for 10 sec. 1.6mm from case
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Electrical characteristics
STP200NF03 - STB200NF03 - STB200NF03-1
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 60A 2 0.0032 Min. 30 1 10 100 4 0.0036 Typ. Max. Unit V A A nA V
IDSS
IGSS VGS(th) RDS(on)
Table 4.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS= 15V , ID = 60A Min. Typ. 200 4950 1750 280 30 195 75 60 113 32 41 140 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0
VDD = 15V, ID = 60A RG = 4.7 VGS = 10V (see Figure 19) VDD = 24V, ID = 120A, VGS = 10V (see Figure 20)
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%.
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STP200NF03 - STB200NF03 - STB200NF03-1
Electrical characteristics
Table 5.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 120A, VGS = 0 70 170 5 Test conditions Min. Typ. Max. 120 480 1.3 Unit A A V ns nC A
ISD = 120A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 25V, Tj = 150C Reverse recovery current (see Figure 21)
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STP200NF03 - STB200NF03 - STB200NF03-1
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
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STP200NF03 - STB200NF03 - STB200NF03-1 Figure 7. Gate charge vs. gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10. Normalized on resistance vs. temperature
Figure 11. Normalized BVDSS vs. temperature
Figure 12. Source-drain diode forward characteristics
7/18
Electrical characteristics Figure 13. Thermal resistance rthj-a vs. PCB copper area
STP200NF03 - STB200NF03 - STB200NF03-1 Figure 14. Max power dissipation vs. PCB copper area
Figure 15. Power Derating vs. Tc
Figure 16. Max Id Current vs. Tc
Figure 17. Allowable Iav vs. Time in Avalanche
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STP200NF03 - STB200NF03 - STB200NF03-1
Electrical characteristics
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the Allowable Current in Avalanche PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse) tAV is the Time in Avalanche To de rate above 25 oC, at fixed IAV, the following equation must be applied: IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.
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Spice thermal model
STP200NF03 - STB200NF03 - STB200NF03-1
3
Spice thermal model
Table 6. Spice parameters
Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 Node 5-4 4-3 3-2 2-1 Value 0.011 0.0012 0.05 0.1
RTHERM1 RTHERM2 RTHERM3 RTHERM4
5-4 4-3 3-2 2-1
0.09 0.02 0.11 0.17
Figure 18. Circuit
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STP200NF03 - STB200NF03 - STB200NF03-1
Test circuit
4
Test circuit
Figure 20. Gate charge test circuit
Figure 19. Switching times test circuit for resistive load
Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
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Package mechanical data
STP200NF03 - STB200NF03 - STB200NF03-1
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STP200NF03 - STB200NF03 - STB200NF03-1
Package mechanical data
D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
1
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Package mechanical data
STP200NF03 - STB200NF03 - STB200NF03-1
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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STP200NF03 - STB200NF03 - STB200NF03-1
Package mechanical data
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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Packaging mechanical data
STP200NF03 - STB200NF03 - STB200NF03-1
6
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STP200NF03 - STB200NF03 - STB200NF03-1
Revision history
7
Revision history
Table 7.
Date 09-Sep-2004 09-Aug-2006
Revision history
Revision 2 3 Complete version New template, no content change Changes
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STP200NF03 - STB200NF03 - STB200NF03-1
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